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TISP3240F3, TISP3260F3,
TISP3290F3,TISP3320F3,TISP3380F3
HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP3xxxF3 (HV) Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
D Package (Top View)
Low Voltage Overshoot under Surge
T
1
8
G
DEVICE
‘3240F3
V DRM
V
180
V (BO)
V
240
NC
NC
R
2
3
4
7
6
5
G
G
G
‘3260F3
200
260
‘3290F3
‘3320F3
‘3380F3
220
240
270
290
320
380
Device Symbol
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 μA
Rated for International Surge Wave Shapes
T
R
Waveshape
2/10 μ s
Standard
GR-1089-CORE
I TSP
A
175
8/20 μ s
10/160 μ s
10/700 μ s
10/560 μ s
10/1000 μ s
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
FCC Part 68
GR-1089-CORE
120
60
50
45
35
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
.......................................UL Recognized Component
Description
These high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and
customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in five voltage variants to
meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in
both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the
device to switch. The high crowbar holding current helps prevent d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
How To Order
Device
TISP3xxxF3
Package
D, Small-outline
Carrier
Tape And Reeled
Order As
TISP3xxxF3DR-S
Insert xxx value corresponding to protection voltages of 240 through 380
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
TISP3380F3DR-S 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3380F3P 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3380F3PS 制造商:Bourns Inc 功能描述:
TISP3380F3P-S 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3380F3SL 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3380F3SLS 制造商:Bourns Inc 功能描述:
TISP3380F3SL-S 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3395T3 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:Overvoltage Protector Series